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  ms 8 n 6 0 n - channel enhancement mode power mosfet publication order number: [ ms8 n 6 0 ] ? bruckewell technology corporation rev. a - 2014 description the ms 8 n 6 0 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220 package is universally preferred for all comm ercial - industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package application ? adapter ? switching mode power supply packing & order information 50/tube ; 1 ,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symbol parameter value unit v dss drain - source voltage 6 0 0 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 7.5 a drai n current - continuous (tc= 100 c ) 4. 5 a i dm drain current pulsed 3 0 a i ar avalanche current 7.5 v e as s ingle pulsed avalanche energy 2 30 mj e ar repetitive avalanche energy 1 4.7 mj dv/dt peak diode recovery dv/dt 4 .5 v/ns ? drain current limited by max imum junction temperature
ms 8 n 6 0 n - channel enhancement mode power mosfet publication order number: [ ms8 n 6 0 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings symbol parameter value unit t l maximum temperature for soldering @ lead at 0.125 in(0.318mm) from case for 10 seconds 300 c p d total power dissipation(@tc = 25 c) 44 w derating factor above 25 c 1 47 w 1. 18 w/ c t stg operating and storage temperature - 55 to +150 c t j storage temperature 150 c note: 1.repetitive rating; pulse width limited by maximum junction temperature. 2. i as 7.5a, v dd =50v, l=7.5mh, v g =10v, starting tj=+25c. 3. i sd 7.5a, di/dt200a/s, vddbvdss, starting tj=+25c. thermal characteristics symbol parameter min. typ. max. unit s r jc thermal resistance, junction - to - case -- -- 0.85 c /w r ja thermal resistanc e, junction - to - ambient -- -- 62.5 static chastatic characteristics symbol parameter test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs = 0 v , i d = 250a 6 00 -- -- v tj = 150 c -- 6 50 -- v b v dss / t j breakdown voltage temperature coefficient i d = 250a, referenced to 25 c -- 0.6 5 -- v/ c v gs(th) gate threshold voltage v ds = v gs , i d = 250 ua 2.0 -- 4.0 v i dss drain - source leakage current v ds = 6 0 0 v , v gs = 0 v v ds = 4 8 0 v , t c = 125 c -- -- 1 10 u a i gss gate - body lea kage , forward v gs = 30 -- -- 100 n a r ds(on) static drain - source on - state resistance v gs = 1 0 v , i d = 3.75 v -- 1.08 1.2
ms 8 n 6 0 n - channel enhancement mode power mosfet publication order number: [ ms8 n 6 0 ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s q g total gate charge v d d = 30 0 v,i d = 6 a, v gs = 10 v -- 3 1.3 -- nc q gs gate - source charge -- 6.9 -- nc q g d gate - drain charge (miller charge) -- 1 4 -- nc c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 1 482 -- pf c oss output capacitance -- 121.7 -- pf c rss reverse transfer capacita nce -- 14 -- pf t d(on) turn - on time v ds = 30 0 v, i d = 6 a, v gs = 10 v, r g = 10 -- 14 .2 -- ns t r rise time -- 11.8 -- ns t d(off) turn - off delay time -- 4 0.1 -- ns tf fall time -- 18.8 -- ns source - drain diode symbol parameter test conditions min typ. max. unit s i s v d = v g = 0, v s = 1.3 v -- -- 7.5 a i sm -- -- 3 0 v sd i s = 7.5 a , v gs = 0 v -- -- 1. 5 v t rr i f = 6 a , v gs = 0 v dif/dt=100a/s -- 504.9 -- ns q rr -- 47.59 -- u c *pulse test : pulse width 300s, duty cycle2%
ms 8 n 6 0 n - channel enhancement mode power mosfet publication order number: [ ms8 n 6 0 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to chan ge without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applicati ons. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties described in the product specification is suitabl e for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and condition s of purchase, including but not limited to the warranty expressed therein.


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